KSA709YTA
TRANS PNP 150V 0.7A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSA709YTA is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a maximum collector current (Ic) of 700 mA and a collector-emitter breakdown voltage (Vce) of 150 V. The transistor exhibits a minimum DC current gain (hFE) of 120 at 50 mA and 2 V, with a transition frequency of 50 MHz. Maximum power dissipation is rated at 800 mW. The KSA709YTA is supplied in a TO-92-3 package and is available in Tape & Box (TB) packaging. It is suitable for use in industrial and consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 800 mW |
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