KSA709GBU
TRANS PNP 150V 0.7A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSA709GBU is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 150V and a continuous collector current capability of up to 700mA. It features a transition frequency of 50MHz and a maximum power dissipation of 800mW. The DC current gain (hFE) is rated at a minimum of 200 at 50mA collector current and 2V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 400mV at 20mA base current and 200mA collector current. The KSA709GBU is supplied in a TO-92-3 (TO-226AA) through-hole package and is suitable for operation in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 50mA, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 800 mW |
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