KSA708CYTA
TRANS PNP 60V 0.7A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSA708CYTA is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 60V and a continuous collector current (Ic) capability of 700mA. The minimum DC current gain (hFE) is 120 at 500mA and 2V. With a transition frequency of 50MHz and a maximum power dissipation of 800mW, it is suitable for use in consumer electronics and industrial control systems. The KSA708CYTA is supplied in a TO-92-3 package, presented on cut tape for automated assembly. Key parameters include a collector cutoff current (Icbo) of 100nA and a Vce(sat) of 700mV at 50mA/500mA. It operates at an ambient temperature up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 800 mW |