KSA643YBU
TRANS PNP 20V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSA643YBU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 20V and a maximum continuous collector current (Ic) of 500mA. The device exhibits a minimum DC current gain (hFE) of 120 at 100mA and 1V. With a power dissipation rating of 500mW and a junction temperature capability of 150°C, it is suitable for operation in demanding environments. The KSA643YBU is supplied in a TO-92-3 (TO-226-3) through-hole package, commonly utilized in consumer electronics and industrial control systems. Its saturation voltage (Vce(sat)) is a maximum of 400mV at 50mA base current and 500mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 200nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 500 mW |
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