KSA643GBU
TRANS PNP 20V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSA643GBU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a 20V collector-emitter breakdown voltage (Vce(max)) and a continuous collector current (Ic(max)) capability of 500mA. It features a maximum power dissipation of 500mW and a low collector cutoff current (Icbo) of 200nA. The transistor exhibits a minimum DC current gain (hFE) of 200 at 100mA and 1V. With a Vce(sat) of 400mV at 50mA and 500mA, it is suitable for applications requiring efficient switching. The KSA643GBU is packaged in a standard TO-92-3 (TO-226AA) through-hole package and is supplied in bulk. This transistor finds utility in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 200nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 500 mW |
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