KSA3010RTU
TRANS PNP 120V 6A TO3PManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSA3010RTU is a PNP bipolar junction transistor (BJT) designed for robust power applications. This component features a maximum collector current (Ic) of 6 A and a collector-emitter breakdown voltage (Vce(max)) of 120 V. With a power dissipation capability of 60 W and a transition frequency of 30 MHz, it is suitable for demanding switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 55 at 1 A and 5 V. The saturation voltage (Vce(sat)) is specified at a maximum of 2.5 V for 500 mA base current and 5 A collector current. The KSA3010RTU is supplied in a TO-3P package, facilitating through-hole mounting. It operates reliably up to a junction temperature of 150°C and finds application in industrial power supplies and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 55 @ 1A, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-3P |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 60 W |
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