KSA1625KTA
TRANS PNP 400V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSA1625KTA is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This device features a maximum collector-emitter breakdown voltage (Vce) of 400 V and a continuous collector current (Ic) capability of 500 mA. With a transition frequency of 10 MHz and a power dissipation rating of 750 mW, it is suitable for use in power supply circuits, audio amplifiers, and general switching applications. The KSA1625KTA exhibits a minimum DC current gain (hFE) of 100 at 50 mA and 5 V. It is supplied in a TO-92-3 (TO-226-3) through-hole package, with leads formed for ease of mounting. The operating junction temperature range is up to 150°C, and it is available in Tape & Box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 750 mW |
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