KSA1381ESTU
TRANS PNP 300V 0.1A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSA1381ESTU is a PNP Silicon Bipolar Junction Transistor (BJT) designed for general purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage (Vce) of 300V and a continuous collector current (Ic) of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 100 at 10mA collector current and 10V Vce, with a transition frequency (fT) of 150MHz. The KSA1381ESTU is packaged in a TO-126-3 (TO-225AA) through-hole configuration, supporting a maximum power dissipation of 7W. Operating temperature ranges from -55°C to 150°C. This device is commonly utilized in industrial and consumer electronics sectors for power supply circuits, audio amplifiers, and switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 7 W |
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