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KSA1381ES

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KSA1381ES

TRANS PNP 300V 0.1A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSA1381ES is a PNP bipolar junction transistor (BJT) designed for high voltage applications. This component offers a 300V collector-emitter breakdown voltage with a maximum collector current of 100mA. It features a transition frequency of 150MHz and a DC current gain (hFE) of at least 100 at 10mA collector current and 10V Vce. The saturation voltage is specified at a maximum of 600mV for a base current of 2mA and collector current of 20mA. With a maximum power dissipation of 7W and an operating temperature range of -55°C to 150°C, the KSA1381ES is suitable for use in power supply circuits, audio amplifiers, and general-purpose amplification and switching applications across various industrial and consumer electronics sectors. The device is supplied in a TO-126-3 (TO-225AA) through-hole package.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 2mA, 20mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 10V
Frequency - Transition150MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max7 W

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