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KSA1220AYS

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KSA1220AYS

TRANS PNP 160V 1.2A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSA1220AYS is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-126 package. This component offers a collector-emitter breakdown voltage of 160V and a continuous collector current capability of 1.2A. With a transition frequency of 175MHz and a maximum power dissipation of 1.2W, it is suitable for various amplification and switching applications. The device exhibits a minimum DC current gain (hFE) of 160 at 300mA and 5V, and a Vce saturation of 700mV at 200mA and 1A. The collector cutoff current is specified at 1µA (ICBO). This transistor finds application in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 200mA, 1A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 300mA, 5V
Frequency - Transition175MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)1.2 A
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max1.2 W

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