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KSA1220AOS

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KSA1220AOS

TRANS PNP 160V 1.2A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi PNP Bipolar Junction Transistor (BJT), part number KSA1220AOS. This through-hole component features a 160V collector-emitter breakdown voltage and a continuous collector current capability of 1.2A. It offers a minimum DC current gain (hFE) of 100 at 300mA and 5V, with a transition frequency of 175MHz. The device dissipates a maximum power of 1.2W and is housed in a TO-126 package. Applications include general-purpose amplification and switching in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 200mA, 1A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 300mA, 5V
Frequency - Transition175MHz
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)1.2 A
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max1.2 W

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