KSA1175RTA
TRANS PNP 50V 0.15A TO92SManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSA1175RTA is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 150mA. With a transition frequency of 180MHz and a maximum power dissipation of 250mW, it offers robust performance in demanding environments. The KSA1175RTA exhibits a minimum DC current gain (hFE) of 40 at 1mA collector current and 6V Vce. Saturation voltage is specified at a maximum of 300mV at 10mA base current and 100mA collector current. The device is supplied in a TO-92S package, suitable for through-hole mounting, and is delivered in Tape & Box packaging for efficient automated handling. This transistor is commonly utilized in consumer electronics, industrial control systems, and audio amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TO-92S |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
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