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KSA1175GTA

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KSA1175GTA

TRANS PNP 50V 0.15A TO92S

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi KSA1175GTA PNP Bipolar Junction Transistor (BJT) in a TO-92S package. This device offers a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 150mA. With a transition frequency of 180MHz and a power dissipation of 250mW, it is suitable for general-purpose amplification and switching applications. The KSA1175GTA features a minimum DC current gain (hFE) of 200 at 1mA collector current and 6V collector-emitter voltage. Saturation voltage is specified at a maximum of 300mV for 10mA base current and 100mA collector current. This component is supplied in Tape & Box packaging and is utilized in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Short Body
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1mA, 6V
Frequency - Transition180MHz
Supplier Device PackageTO-92S
Current - Collector (Ic) (Max)150 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max250 mW

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