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KSA1175GBU

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KSA1175GBU

TRANS PNP 50V 0.15A TO92S

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSA1175GBU is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 50 V and a continuous collector current capability of 150 mA. With a transition frequency of 180 MHz and a maximum power dissipation of 250 mW, it offers efficient performance in various electronic systems. The DC current gain (hFE) is specified at a minimum of 200 at 1 mA and 6 V. The transistor is housed in a TO-92S package, facilitating through-hole mounting. Typical applications include audio amplification and switching circuits within consumer electronics and industrial control systems. The collector cutoff current (ICBO) is rated at a maximum of 100 nA.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Short Body
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1mA, 6V
Frequency - Transition180MHz
Supplier Device PackageTO-92S
Current - Collector (Ic) (Max)150 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max250 mW

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