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KSA1142OSTU

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KSA1142OSTU

TRANS PNP 180V 0.1A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSA1142OSTU is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector emitter breakdown voltage (Vceo) of 180V and a continuous collector current (Ic) capability of 100mA. With a transition frequency (fT) of 180MHz, it is suitable for moderate frequency circuits. The transistor offers a minimum DC current gain (hFE) of 100 at 10mA collector current and 5V collector emitter voltage. Its maximum power dissipation is 1.2W. The KSA1142OSTU is housed in a TO-126-3 (TO-225AA) through-hole package for ease of mounting. It operates within an ambient temperature range up to 150°C (TJ) and exhibits a Vce(sat) of 500mV at 5mA base current and 50mA collector current. This device finds application in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 5V
Frequency - Transition180MHz
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)180 V
Power - Max1.2 W

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