KSA1015YTA
TRANS PNP 50V 0.15A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSA1015YTA is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 150mA. With a transition frequency of 80MHz and a minimum DC current gain (hFE) of 120 at 2mA collector current and 6V collector-emitter voltage, it offers efficient signal amplification. The KSA1015YTA has a maximum power dissipation of 400mW and a Vce(sat) of 300mV at 10mA base current and 100mA collector current. It is supplied in a TO-92-3 package, suitable for through-hole mounting. The device is available in Cut Tape (CT) packaging. This component finds utility in various electronic systems, including consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 9 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 400 mW |