KSA1015OTA
TRANS PNP 50V 0.15A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSA1015OTA is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a 50V collector-emitter breakdown voltage and a maximum collector current capability of 150mA. Key performance parameters include a minimum DC current gain (hFE) of 70 at 2mA and 6V, and a transition frequency of 80MHz. The KSA1015OTA features a maximum power dissipation of 400mW and a Vce(sat) of 300mV at 10mA collector current and 100mA base current. It is supplied in a TO-92-3 package (TO-226-3) with formed leads for through-hole mounting. Typical applications for this device include audio amplification and low-frequency signal processing in consumer electronics and industrial automation. The operating junction temperature range is up to 150°C. This transistor is provided in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 400 mW |
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