KSA1015GRTA
TRANS PNP 50V 0.15A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSA1015GRTA is a PNP bipolar junction transistor with a 50V collector-emitter breakdown voltage and a maximum collector current of 150mA. This device features a transition frequency of 80MHz and a power dissipation of 400mW. It offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 6V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 300mV at 10mA base current and 100mA collector current. The collector cutoff current (ICBO) is specified at a maximum of 100nA. This transistor is housed in a TO-92-3 package and is suitable for through-hole mounting. The operating junction temperature range extends to 150°C. The KSA1015GRTA is typically found in general-purpose amplification and switching applications across various industrial and consumer electronics sectors. The packaging format is Tape & Box (TB).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 400 mW |
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