KSA1013RTA
TRANS PNP 160V 1A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSA1013RTA is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 160V and a continuous collector current of 1A, with a maximum power dissipation of 900mW. The transition frequency is rated at 50MHz. The KSA1013RTA is supplied in a TO-92-3 package, suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 200mA and 5V, and a collector cut-off current (ICBO) of 1µA. Vce(sat) is specified at 1.5V maximum for 500mA collector current driven by 50mA base current. This component is often utilized in consumer electronics, industrial controls, and power management circuits. It is available in Tape & Box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 200mA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 900 mW |
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