KSA1010Y
TRANS PNP 100V 7A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSA1010Y, a PNP bipolar junction transistor, is specified for high-performance applications requiring robust power handling. This through-hole component features a maximum collector current (Ic) of 7 A and a collector-emitter breakdown voltage (Vce(break) max) of 100 V. The device exhibits a minimum DC current gain (hFE) of 100 at 3 A and 5 V, with a saturation voltage (Vce(sat) max) of 600 mV at 500 mA and 5 A. Its thermal performance is supported by a maximum power dissipation of 1.5 W and an operating junction temperature up to 150°C. The TO-220-3 package is suitable for demanding thermal environments. This transistor is commonly utilized in power supply circuits, audio amplifiers, and general-purpose switching applications within the consumer electronics and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 3A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.5 W |
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