FZT3019
TRANS NPN 80V 1A SOT223-4Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FZT3019 is an NPN bipolar junction transistor designed for robust performance in demanding applications. Featuring a maximum collector current of 1A and a collector-emitter breakdown voltage of 80V, this device offers a transition frequency of 100MHz. It is supplied in a SOT-223-4 surface mount package for efficient board assembly. Key electrical parameters include a maximum power dissipation of 1W and a low collector cutoff current of 10nA (ICBO). The guaranteed minimum DC current gain (hFE) is 100 at 150mA and 10V. Saturation voltage (Vce Sat) is specified at a maximum of 500mV for 50mA base current and 500mA collector current. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in power management and general-purpose amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-223-4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |