FSB749
TRANS PNP 25V 3A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi FSB749 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 25V and a maximum continuous collector current of 3A. It features a transition frequency of 100MHz, a power dissipation of 500mW, and a minimum DC current gain (hFE) of 100 at 1A and 2V. The saturation voltage (Vce(sat)) is specified at a maximum of 600mV at 300mA collector current and 3A collector current. The device is supplied in a SOT-23-3 package, also known as TO-236-3 or SC-59, and is available on tape and reel (TR). The operating temperature range is -55°C to 150°C (TJ). This transistor is suitable for use in various electronic systems, including power management, general switching, and amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 500 mW |
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