FSB660
TRANS PNP 60V 2A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FSB660 is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 2A. With a transition frequency of 75MHz and a maximum power dissipation of 500mW, it is suitable for various switching and amplification tasks. Typical DC current gain (hFE) is a minimum of 100 at 500mA and 2V. The saturation voltage (Vce(sat)) is specified at a maximum of 350mV for an input base current of 200mA driving a collector current of 2A. The device is packaged in a SOT-23-3 (TO-236-3, SC-59) format and supplied on tape and reel. It operates within a temperature range of -55°C to 150°C. This transistor finds application in industrial and consumer electronics where efficient power control and signal amplification are required.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Frequency - Transition | 75MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
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