FSB649
TRANS NPN 25V 3A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi FSB649 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This surface-mount device, housed in a SOT-23-3 (TO-236-3, SC-59) package, offers a maximum collector current of 3 A and a collector-emitter breakdown voltage of 25 V. With a transition frequency of 150 MHz and a maximum power dissipation of 500 mW, it is suitable for use in consumer electronics and industrial control systems. Key parameters include a minimum DC current gain (hFE) of 100 at 1 A and 2 V, and a Vce(sat) of 600 mV at 300 mA and 3 A. The device operates within an ambient temperature range of -55°C to 150°C and is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 500 mW |
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