FSB619
TRANS NPN 50V 2A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi FSB619 NPN Bipolar Junction Transistor, rated for a 50V collector-emitter breakdown voltage and a continuous collector current of 2A. This surface mount device, packaged in a SOT-23-3 (TO-236-3, SC-59), offers a transition frequency of 100MHz and a maximum power dissipation of 500mW. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 1A and 2V, and a Vce(sat) of 320mV at 50mA and 2A. The device operates within a temperature range of -55°C to 150°C. This component is commonly utilized in industrial and consumer electronics applications requiring efficient switching and amplification. The FSB619 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 50mA, 2A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |