FPN660A
TRANS PNP 60V 3A TO226Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
The onsemi FPN660A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vceo) of 60V and a continuous collector current (Ic) capability of up to 3A. With a transition frequency (fT) of 75MHz, it is suitable for moderate-frequency operations. The device offers a minimum DC current gain (hFE) of 250 at 500mA and 2V, and a collector-emitter saturation voltage (Vce(sat)) of 400mV at 2A collector current and 200mA base current. It is packaged in a TO-226 (TO-92-3 Long Body) through-hole configuration and has a maximum power dissipation of 1W. The operating temperature range is -55°C to 150°C. This transistor finds use in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 500mA, 2V |
| Frequency - Transition | 75MHz |
| Supplier Device Package | TO-226 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
Request a Quote
Clients Also Buy
BC547BTAR
TRANS NPN 45V 0.1A TO92-3
MJE200STU
TRANS NPN 25V 5A TO126-3
PN2369A_D27Z
TRANS NPN 15V 0.2A TO92-3
