FPN530A
TRANS NPN 30V 3A TO226Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FPN530A is a bipolar junction transistor (BJT) with an NPN configuration. This component offers a collector-emitter breakdown voltage of 30V and a continuous collector current of up to 3A. It features a transition frequency of 150MHz and a maximum power dissipation of 1W. The device exhibits a typical DC current gain (hFE) of 250 at 100mA collector current and 2V collector-emitter voltage, with a Vce(sat) of 250mV at 100mA base current and 1A collector current. The collector cutoff current (ICBO) is specified at a maximum of 100nA. This through-hole device is packaged in a TO-226-3, TO-92-3 Long Body configuration and operates across a temperature range of -55°C to 150°C. Applications for this transistor are found in general-purpose switching and amplification circuits within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-226 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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