FPN530
TRANS NPN 30V 3A TO226Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's FPN530 is an NPN Bipolar Junction Transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage (Vce) of 30V and a continuous collector current (Ic) capability of up to 3A. The FPN530 offers a minimum DC current gain (hFE) of 100 at 100mA and 2V, with a transition frequency of 150MHz. It is packaged in a TO-226 (TO-92-3 Long Body) configuration for through-hole mounting. The maximum power dissipation is 1W, and it operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a saturation voltage (Vce(sat)) of 300mV at 100mA and 1A, and a collector cutoff current (Icbo) of 100nA. This device is commonly utilized in consumer electronics, industrial automation, and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-226 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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