FPN330A
TRANS NPN 30V 3A TO226Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FPN330A is a bipolar junction transistor (BJT) designed for robust performance in various applications. This NPN transistor offers a collector-emitter breakdown voltage of 30V and a continuous collector current capability of up to 3A. With a maximum power dissipation of 1W and a transition frequency of 100MHz, it is suitable for switching and amplification tasks. Key parameters include a minimum DC current gain (hFE) of 250 at 100mA and 2V, and a Vce saturation voltage of 450mV at 100mA and 1A. The collector cutoff current (ICBO) is a maximum of 100nA. This component is supplied in a TO-226 package, facilitating through-hole mounting. Operating temperature ranges from -55°C to 150°C. This device finds application in areas such as power supply regulation, motor control, and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-226 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1 W |
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