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FPN330

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FPN330

TRANS NPN 30V 3A TO226

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi FPN330 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This through-hole component, housed in a TO-226 package, offers a collector current rating of 3A and a collector-emitter breakdown voltage of 30V. Key specifications include a minimum DC current gain (hFE) of 100 at 100mA and 2V, and a transition frequency of 100MHz. The device features a maximum power dissipation of 1W and an operating temperature range of -55°C to 150°C. Saturation voltage at 100mA base current and 1A collector current is 500mV. This transistor finds utility in various industrial and consumer electronics, including power management and signal conditioning circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 2V
Frequency - Transition100MHz
Supplier Device PackageTO-226
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max1 W

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