FMBSA06
TRANS NPN 80V 0.5A SUPERSOT-6Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number FMBSA06. This device features an 80V collector-emitter breakdown voltage and a continuous collector current capability of 500mA. With a transition frequency of 100MHz and a maximum power dissipation of 700mW, the FMBSA06 is suitable for general-purpose amplification and switching applications. It offers a minimum DC current gain (hFE) of 100 at 100mA collector current and 1V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 250mV at 10mA base current and 100mA collector current. Packaged in a SuperSOT™-6, this surface-mount component is delivered on tape and reel. Operating temperature range is -55°C to 150°C. Commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SuperSOT™-6 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 700 mW |
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