FMBS5551
TRANS NPN 160V 0.6A SUPERSOT-6Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FMBS5551 is an NPN bipolar junction transistor designed for surface mount applications. This component features a 160V collector-emitter breakdown voltage and a maximum collector current of 600mA. With a transition frequency of 300MHz and a power dissipation of 700mW, it is suitable for general-purpose amplification and switching in various electronic systems. Key specifications include a minimum DC current gain (hFE) of 80 at 10mA, 5V, and a Vce(sat) of 200mV at 5mA, 50mA. The device operates within a temperature range of -55°C to 150°C and is supplied in a SuperSOT™-6 package, compatible with SOT-23-6 Thin and TSOT-23-6 footprints. This transistor is commonly utilized in consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SuperSOT™-6 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 700 mW |
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