FMBS5401
TRANS PNP 150V 0.6A SUPERSOT-6Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's FMBS5401 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This device features a collector-emitter breakdown voltage of 150 V and a continuous collector current capability of 600 mA. With a transition frequency of 300 MHz and a power dissipation of 700 mW, the FMBS5401 is suitable for switching and amplification tasks. It is supplied in the SuperSOT™-6 package, facilitating compact board designs. Key electrical characteristics include a saturation voltage of 500 mV at 5 mA base current and 50 mA collector current, and a DC current gain (hFE) of at least 60 at 10 mA collector current and 5 V collector-emitter voltage. The operating temperature range is -55°C to 150°C. This component finds utility in various industrial and consumer electronics applications requiring robust transistor performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SuperSOT™-6 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 700 mW |
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