FMBS2383
TRANS NPN 160V 0.8A SUPERSOT-6Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FMBS2383 is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This component features a 160V collector-emitter breakdown voltage and an 800mA maximum collector current. With a transition frequency of 120MHz and a maximum power dissipation of 630mW, it is suitable for use in power management circuits and signal amplification. The device offers a minimum DC current gain (hFE) of 80 at 100mA, 5V. It is supplied in a SuperSOT™-6 package for surface mounting, with a package/case of SOT-23-6 Thin, TSOT-23-6. The operating temperature range extends to 150°C. This transistor is commonly utilized in consumer electronics, industrial control systems, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | SuperSOT™-6 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 630 mW |
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