FMBM5401-SB74001
TRANS PNP 150V 0.6A SUPERSOT-6Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, part number FMBM5401-SB74001. This device features a 150V collector-emitter breakdown voltage and a maximum continuous collector current of 600mA. With a transition frequency of 300MHz and a maximum power dissipation of 700mW, it is suitable for demanding applications. The transistor is housed in a SuperSOT™-6 package, designed for surface mounting. Key parameters include a minimum DC current gain (hFE) of 60 at 10mA/5V and a Vce(sat) of 500mV at 5mA/50mA. The collector cutoff current is specified at 50nA (ICBO). This component finds application in various electronic systems, including power management and signal amplification circuits. It operates within an ambient temperature range of -55°C to 150°C. The packaging is Tape & Reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SuperSOT™-6 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 700 mW |
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