FMBM5401
TRANS PNP 150V 0.6A SUPERSOT-6Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, FMBM5401. This device features a 150V collector-emitter breakdown voltage and a continuous collector current rating of 600mA. With a transition frequency of 300MHz and a maximum power dissipation of 700mW, it is suitable for applications requiring efficient switching and amplification. The DC current gain (hFE) is a minimum of 60 at 10mA collector current and 5V collector-emitter voltage. The transistor exhibits a Vce(sat) of 500mV maximum at 5mA base current and 50mA collector current. Packaged in a SuperSOT™-6 (SOT-23-6 Thin) for surface mounting, it operates across a temperature range of -55°C to 150°C. This component is utilized in various industrial and consumer electronics, including power management and signal conditioning circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SuperSOT™-6 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 700 mW |
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