FJX945YTF
TRANS NPN 50V 0.15A SOT323Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi FJX945YTF is an NPN bipolar junction transistor (BJT) suitable for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 150mA. With a transition frequency of 300MHz and a maximum power dissipation of 200mW, it is designed for operation within an extended temperature range up to 150°C. The device is supplied in a SOT-323 (SC-70) surface-mount package, delivered on tape and reel. Key electrical parameters include a minimum DC current gain (hFE) of 120 at 1mA, 6V, and a collector cutoff current (ICBO) of 100nA. The saturation voltage (Vce Sat) is specified at 300mV maximum for 10mA base current and 100mA collector current. This transistor finds application in various electronic systems, including consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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