FJPF5200RTU
TRANS NPN 250V 17A TO220F-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJPF5200RTU is an NPN bipolar junction transistor (BJT) designed for robust power applications. This component features a high collector-emitter breakdown voltage of 250V and a maximum collector current of 17A, enabling it to handle significant power dissipation up to 50W. With a transition frequency of 30MHz and a DC current gain (hFE) of at least 55 at 1A and 5V, it offers efficient switching and amplification characteristics. The Vce saturation voltage is rated at a maximum of 3V when driven by 800mA into 8A of collector current. This device is housed in a TO-220F-3 package, suitable for through-hole mounting and operating across a wide temperature range of -50°C to 150°C. It is commonly employed in power supply circuits, audio amplifiers, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 55 @ 1A, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-220F-3 |
| Current - Collector (Ic) (Max) | 17 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 50 W |
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