FJPF5200OTU
TRANS NPN 250V 17A TO220F-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor (BJT), part number FJPF5200OTU. This device offers a collector-emitter breakdown voltage of 250V and a continuous collector current capability of 17A. With a power dissipation of 50W and a transition frequency of 30MHz, it is suitable for applications requiring robust power handling. Key parameters include a saturation voltage (Vce(sat)) of 3V at 8A collector current with 800mA base current, and a minimum DC current gain (hFE) of 80 at 1A collector current. The current cutoff is rated at 5µA (ICBO) maximum. This through-hole component is housed in a TO-220F-3 package and operates within a temperature range of -50°C to 150°C. It is commonly employed in power supply circuits, audio amplifiers, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-220F-3 |
| Current - Collector (Ic) (Max) | 17 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 50 W |
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