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FJPF5027RYDTU

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FJPF5027RYDTU

TRANS NPN 800V 3A TO220F-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi NPN Bipolar Junction Transistor (BJT), part number FJPF5027RYDTU. This through-hole component features an 800V collector-emitter breakdown voltage and a maximum collector current of 3A. With a transition frequency of 15MHz and a maximum power dissipation of 40W, it is suitable for demanding applications. The TO-220F-3 package ensures robust thermal performance up to 150°C. This device exhibits a minimum DC current gain (hFE) of 15 at 200mA and 5V, with a Vce saturation of 2V at 300mA and 1.5A. Applications include power switching and general-purpose amplification in industrial and automotive sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 300mA, 1.5A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 200mA, 5V
Frequency - Transition15MHz
Supplier Device PackageTO-220F-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)800 V
Power - Max40 W

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