FJPF5027RTU
TRANS NPN 800V 3A TO220F-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJPF5027RTU is an NPN bipolar junction transistor designed for high-voltage applications. This through-hole component features a 800V collector-emitter breakdown voltage and a maximum collector current of 3A, with a power dissipation of 40W. The device offers a transition frequency of 15MHz and a minimum DC current gain (hFE) of 15 at 200mA and 5V. Saturation voltage is specified at 2V maximum for 300mA base current and 1.5A collector current. The operating junction temperature can reach up to 150°C. Packaged in a TO-220F-3 (Full Pack) configuration, the FJPF5027RTU is suitable for use in power supply, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 300mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 200mA, 5V |
| Frequency - Transition | 15MHz |
| Supplier Device Package | TO-220F-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 40 W |
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