FJPF5021R
TRANS NPN 500V 5A TO220F-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi FJPF5021R is an NPN bipolar junction transistor designed for power switching applications. This component features a 500V collector-emitter breakdown voltage and a continuous collector current capability of 5A. With a transition frequency of 15MHz and a maximum power dissipation of 40W, it is suitable for demanding environments. The device exhibits a minimum DC current gain (hFE) of 15 at 600mA and 5V, and a Vce(sat) of 1V at 3A collector current and 600mA base current. Off-state characteristics include a collector cutoff current (ICBO) of 10µA. The FJPF5021R is supplied in a TO-220F-3 package for through-hole mounting and operates at junction temperatures up to 150°C. This transistor is utilized in applications such as power supplies, lighting control, and motor drivers within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 600mA, 5V |
| Frequency - Transition | 15MHz |
| Supplier Device Package | TO-220F-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 500 V |
| Power - Max | 40 W |
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