FJPF13009H2TU
TRANS NPN 400V 12A TO220F-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's FJPF13009H2TU is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This component features a maximum collector-emitter breakdown voltage of 400 V and a continuous collector current capability of 12 A. With a power dissipation of 50 W and a transition frequency of 4 MHz, it is suitable for demanding power switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 8 at 5 A and 5 V. Its saturation voltage (Vce Sat) is specified at a maximum of 3 V when driven by 3 A base current for a 12 A collector current. The FJPF13009H2TU is presented in a TO-220F-3 package, designed for through-hole mounting. This transistor finds application in areas such as power supplies, lighting ballast circuits, and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3A, 12A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5A, 5V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-220F-3 |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 50 W |
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