FJPF13007H2
TRANS NPN 400V 8A TO220F-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJPF13007H2 is a high-voltage NPN bipolar junction transistor (BJT) designed for demanding power applications. Featuring a 400V collector-emitter breakdown voltage and a continuous collector current capability of 8A, this device excels in power supply regulation and switching circuits. Its 40W maximum power dissipation and 4MHz transition frequency make it suitable for power factor correction (PFC) stages, switch-mode power supplies (SMPS), and general-purpose high-voltage switching in consumer electronics and industrial control systems. The transistor exhibits a minimum DC current gain (hFE) of 26 at 2A and 5V, with a saturation voltage (Vce(sat)) of 3V at 2A and 8A. It is housed in a TO-220F-3 package for through-hole mounting, offering robust thermal performance up to 150°C junction temperature.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 2A, 8A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 26 @ 2A, 5V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-220F-3 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 40 W |
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