FJP9100TU
TRANS NPN DARL 275V 4A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi FJP9100TU is an NPN Darlington bipolar junction transistor designed for high voltage and moderate current applications. This component features a maximum collector-emitter breakdown voltage of 275V and a continuous collector current capability of 4A. With a significant DC current gain (hFE) of at least 1000 at 500mA and 5V, it is suitable for amplification and switching tasks. The transistor exhibits a Vce(sat) of 1.5V at 5mA base current and 2A collector current, indicating efficient saturation characteristics. It is rated for a maximum power dissipation of 40W and operates within a junction temperature range of 150°C. The FJP9100TU is packaged in a standard TO-220-3 through-hole configuration and is supplied in tubes. This device finds application in power supply circuits and general-purpose amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 5mA, 2A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 500mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 275 V |
| Power - Max | 40 W |
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