FJP5200RTU
TRANS NPN 250V 17A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJP5200RTU is an NPN bipolar junction transistor designed for power switching applications. This device features a maximum collector current of 17 A and a collector-emitter breakdown voltage of 250 V. With a power dissipation capability of 80 W and a transition frequency of 30 MHz, it is suitable for use in voltage regulators, power amplifiers, and switching power supplies. The transistor offers a DC current gain (hFE) of 55 minimum at 1 A and 5 V, and a Vce(sat) of 3 V maximum at 800 mA and 8 A. Packaged in a TO-220-3 through-hole configuration, the FJP5200RTU operates across a temperature range of -50°C to 150°C. This component finds application in consumer electronics and industrial equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 55 @ 1A, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 17 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 80 W |
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