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FJP5200OTU

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FJP5200OTU

TRANS NPN 250V 17A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi FJP5200OTU is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component features a 250V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 17A, delivering up to 80W of power dissipation. With a transition frequency of 30MHz and a minimum DC current gain (hFE) of 80 at 1A and 5V, the FJP5200OTU offers robust amplification characteristics. It is packaged in a standard TO-220-3 configuration and operates across a wide temperature range of -50°C to 150°C. This device is suitable for power supply circuits, audio amplifiers, and general-purpose switching applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 800mA, 8A
Current - Collector Cutoff (Max)5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1A, 5V
Frequency - Transition30MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)17 A
Voltage - Collector Emitter Breakdown (Max)250 V
Power - Max80 W

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