FJP5027RTU
TRANS NPN 800V 3A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJP5027RTU is an NPN Bipolar Junction Transistor (BJT) designed for demanding applications. This device offers a high collector-emitter breakdown voltage of 800V and a continuous collector current capability of 3A, with a maximum power dissipation of 50W. Featuring a transition frequency of 15MHz and a minimum DC current gain (hFE) of 15 at 200mA and 5V, the FJP5027RTU is suitable for power supply switching, lighting control, and industrial motor drive applications. It is supplied in a TO-220-3 package for through-hole mounting. The collector cutoff current (ICBO) is a maximum of 10µA, and the Vce saturation is 2V at 300mA and 1.5A. Operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 300mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 200mA, 5V |
| Frequency - Transition | 15MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 50 W |
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