FJP5027R
TRANS NPN 800V 3A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJP5027R is an NPN Bipolar Junction Transistor (BJT) designed for high-voltage applications. This device features a 800V collector-emitter breakdown voltage and a continuous collector current capability of 3A. With a power dissipation of 50W and a transition frequency of 15MHz, it is suitable for demanding power switching and amplification tasks. The minimum DC current gain (hFE) is 15 at 200mA and 5V. The saturation voltage (Vce) is a maximum of 2V at 300mA collector current and 1.5A base current. Packaged in a TO-220-3 through-hole configuration, the FJP5027R operates at junction temperatures up to 150°C. This component finds application in power supplies, lighting ballasts, and general-purpose high-voltage switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 300mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 200mA, 5V |
| Frequency - Transition | 15MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 50 W |
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