FJP5027O
TRANS NPN 800V 3A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJP5027O is an NPN bipolar junction transistor designed for high voltage applications. Featuring a maximum collector emitter breakdown voltage of 800V and a continuous collector current capability of 3A, this component is rated for a maximum power dissipation of 50W. Its transition frequency is specified at 15MHz. The transistor type is NPN, with a typical DC current gain (hFE) of 20 at 200mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 2V at 300mA base current and 1.5A collector current. The FJP5027O is supplied in a TO-220-3 package suitable for through-hole mounting. Operating temperature range extends up to 150°C. This device is commonly utilized in power supply circuits, lighting control, and general-purpose high-voltage switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 300mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 200mA, 5V |
| Frequency - Transition | 15MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 50 W |
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